15 results
Neoadjuvant tyrosine kinase inhibitor therapy in locally advanced differentiated thyroid cancer: a single centre case series
- J J Y Yeo, K Stewart, P Maniam, S Arman, D Srinivasan, L Wall, M MacNeill, M Strachan, I Nixon
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- Journal:
- The Journal of Laryngology & Otology / Volume 137 / Issue 11 / November 2023
- Published online by Cambridge University Press:
- 22 March 2023, pp. 1237-1243
- Print publication:
- November 2023
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Objective
Primary surgical resection remains the mainstay of management in locally advanced differentiated thyroid cancer. Tyrosine kinase inhibitors have recently shown promising results in patients with recurrent locally advanced differentiated thyroid cancer. This study discussed four patients with locally advanced differentiated thyroid cancer managed with tyrosine kinase inhibitors used prior to surgery in the ‘neoadjuvant’ setting.
MethodProspective data collection through a local thyroid database from February 2016 identified four patients with locally advanced differentiated thyroid cancer unsuitable for primary surgical resection commenced on neoadjuvant tyrosine kinase inhibitor therapy.
ResultsAll cases had T4a disease at presentation. Three cases tolerated tyrosine kinase inhibitor therapy for more than 14 months while the last case failed to tolerate treatment at 1 month. All patients subsequently underwent total thyroidectomy to facilitate adjuvant radioactive iodine treatment. Disease-specific survival remains at 100 per cent currently (range, 29–75 months).
ConclusionNeoadjuvant tyrosine kinase inhibitors in locally advanced differentiated thyroid cancer can be effective in reducing primary tumour extent to potentially facilitate a more limited surgical resection for local disease control.
C.5 Musashi-1 is a master regulator of aberrant translation in MYC-amplified Group 3 medulloblastoma
- MM Kameda-Smith, H Zhu, E Luo, C Venugopal, K Brown, BA Yee, S Xing, F Tan, D Bakhshinyan, AA Adile, M Subapanditha, D Picard, J Moffat, A Fleming, K Hope, J Provias, M Remke, Y Lu, J Reimand, R Wechsler-Reya, G Yeo, SK Singh
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- Journal:
- Canadian Journal of Neurological Sciences / Volume 48 / Issue s3 / November 2021
- Published online by Cambridge University Press:
- 05 January 2022, p. S19
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Background: Medulloblastoma (MB) is the most common solid malignant pediatric brain neoplasm. Group 3 (G3) MB, particularly MYC amplified G3 MB, is the most aggressive subgroup with the highest frequency of children presenting with metastatic disease, and is associated with a poor prognosis. To further our understanding of the role of MSI1 in MYC amplified G3 MB, we performed an unbiased integrative analysis of eCLIP binding sites, with changes observed at the transcriptome, the translatome, and the proteome after shMSI1 inhibition. Methods: Primary human pediatric MBs, SU_MB002 and HD-MB03 were kind gifts from Dr. Yoon-Jae Cho (Harvard, MS) and Dr. Till Milde (Heidelberg) and cultured for in vitro and in vivo experiments. eCLIP, RNA-seq, Polysome-seq, and TMT-MS were completed as previously described. Results:MSI1 is overexpressed in G3 MB. shRNA Msi1 interference resulted in a reduction in tumour burden conferring a survival advantage to mice injected with shMSI1 G3MB cells. Robust ranked multiomic analysis (RRA) identified an unconventional gene set directly perturbed by MSI1 in G3 MB. Conclusions: Our robust unbiased integrative analysis revealed a distinct role for MSI1 in the maintenance of the stem cell state in G3 MB through post-transcriptional modification of multiple pathways including identification of unconventional targets such as HIPK1.
Nano Superlattice-like Materials as Thermal Insulators for Phase-Change Random Access Memory
- D. Loke, L. P. Shi, W. J. Wang, R. Zhao, L. T. Ng, K. G. Lim, H. X. Yang, T. C. Chong, Y. C. Yeo.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1404 / 2012
- Published online by Cambridge University Press:
- 16 March 2012, mrsf11-1404-w09-05
- Print publication:
- 2012
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Nanoscale superlattice-like (SLL) dielectric was employed to reduce the power consumption of the Phase-change random access memory (PCRAM) cells. In this study, we have simulated and found that the cells with the SLL dielectric have a higher peak temperature compared to that of the cells with the SiO2 dielectric after constant pulse activation, due to the interface scattering mechanism. Scaling of the SLL dielectric has resulted in higher peak temperatures, which can be even higher after material/structural modifications. Furthermore, the SLL dielectric has good material properties that enable the cells to have high endurance. This shows the effectiveness of the SLL dielectric for advanced memory applications.
Clinical characteristics and audiological significance of spontaneous otoacoustic emissions in tinnitus patients with normal hearing
- D-K Kim, S-N Park, K-H Park, H G Choi, E-J Jeon, Y-S Park, S W Yeo
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- Journal:
- The Journal of Laryngology & Otology / Volume 125 / Issue 3 / March 2011
- Published online by Cambridge University Press:
- 05 November 2010, pp. 246-250
- Print publication:
- March 2011
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Objective:
To define the clinical and audiological features of normal-hearing tinnitus patients with spontaneous otoacoustic emissions, and to evaluate the role of spontaneous otoacoustic emissions in tinnitus generation.
Materials and methods:Thirty-two patients with spontaneous otoacoustic emissions were compared with 29 patients without spontaneous otoacoustic emissions, regarding clinical and audiological aspects.
Results:The mean age of the study group subjects was significantly lower, and they experienced the kindling effect less frequently than the control group. The mean tinnitus handicap inventory score of the study group was considerably higher than that of the controls, although the difference was not statistically significant. The study group had significantly quieter tinnitus, and higher transient evoked and distortion product otoacoustic emission responses, compared with the control group.
Conclusions:Normal-hearing tinnitus patients with spontaneous otoacoustic emissions have different clinical and audiological characteristics, compared with those without spontaneous otoacoustic emissions. Appropriate evaluation and treatment should be considered at an early stage in these patients.
Contributors
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- By Rose Teteki Abbey, K. C. Abraham, David Tuesday Adamo, LeRoy H. Aden, Efrain Agosto, Victor Aguilan, Gillian T. W. Ahlgren, Charanjit Kaur AjitSingh, Dorothy B E A Akoto, Giuseppe Alberigo, Daniel E. Albrecht, Ruth Albrecht, Daniel O. Aleshire, Urs Altermatt, Anand Amaladass, Michael Amaladoss, James N. Amanze, Lesley G. Anderson, Thomas C. Anderson, Victor Anderson, Hope S. Antone, María Pilar Aquino, Paula Arai, Victorio Araya Guillén, S. Wesley Ariarajah, Ellen T. Armour, Brett Gregory Armstrong, Atsuhiro Asano, Naim Stifan Ateek, Mahmoud Ayoub, John Alembillah Azumah, Mercedes L. García Bachmann, Irena Backus, J. Wayne Baker, Mieke Bal, Lewis V. Baldwin, William Barbieri, António Barbosa da Silva, David Basinger, Bolaji Olukemi Bateye, Oswald Bayer, Daniel H. Bays, Rosalie Beck, Nancy Elizabeth Bedford, Guy-Thomas Bedouelle, Chorbishop Seely Beggiani, Wolfgang Behringer, Christopher M. Bellitto, Byard Bennett, Harold V. Bennett, Teresa Berger, Miguel A. Bernad, Henley Bernard, Alan E. Bernstein, Jon L. Berquist, Johannes Beutler, Ana María Bidegain, Matthew P. Binkewicz, Jennifer Bird, Joseph Blenkinsopp, Dmytro Bondarenko, Paulo Bonfatti, Riet en Pim Bons-Storm, Jessica A. Boon, Marcus J. Borg, Mark Bosco, Peter C. Bouteneff, François Bovon, William D. Bowman, Paul S. Boyer, David Brakke, Richard E. Brantley, Marcus Braybrooke, Ian Breward, Ênio José da Costa Brito, Jewel Spears Brooker, Johannes Brosseder, Nicholas Canfield Read Brown, Robert F. Brown, Pamela K. Brubaker, Walter Brueggemann, Bishop Colin O. Buchanan, Stanley M. Burgess, Amy Nelson Burnett, J. Patout Burns, David B. Burrell, David Buttrick, James P. Byrd, Lavinia Byrne, Gerado Caetano, Marcos Caldas, Alkiviadis Calivas, William J. Callahan, Salvatore Calomino, Euan K. Cameron, William S. Campbell, Marcelo Ayres Camurça, Daniel F. Caner, Paul E. Capetz, Carlos F. Cardoza-Orlandi, Patrick W. Carey, Barbara Carvill, Hal Cauthron, Subhadra Mitra Channa, Mark D. Chapman, James H. Charlesworth, Kenneth R. Chase, Chen Zemin, Luciano Chianeque, Philip Chia Phin Yin, Francisca H. Chimhanda, Daniel Chiquete, John T. Chirban, Soobin Choi, Robert Choquette, Mita Choudhury, Gerald Christianson, John Chryssavgis, Sejong Chun, Esther Chung-Kim, Charles M. A. Clark, Elizabeth A. Clark, Sathianathan Clarke, Fred Cloud, John B. Cobb, W. Owen Cole, John A Coleman, John J. Collins, Sylvia Collins-Mayo, Paul K. Conkin, Beth A. Conklin, Sean Connolly, Demetrios J. Constantelos, Michael A. Conway, Paula M. Cooey, Austin Cooper, Michael L. Cooper-White, Pamela Cooper-White, L. William Countryman, Sérgio Coutinho, Pamela Couture, Shannon Craigo-Snell, James L. Crenshaw, David Crowner, Humberto Horacio Cucchetti, Lawrence S. Cunningham, Elizabeth Mason Currier, Emmanuel Cutrone, Mary L. Daniel, David D. Daniels, Robert Darden, Rolf Darge, Isaiah Dau, Jeffry C. Davis, Jane Dawson, Valentin Dedji, John W. de Gruchy, Paul DeHart, Wendy J. Deichmann Edwards, Miguel A. De La Torre, George E. Demacopoulos, Thomas de Mayo, Leah DeVun, Beatriz de Vasconcellos Dias, Dennis C. Dickerson, John M. Dillon, Luis Miguel Donatello, Igor Dorfmann-Lazarev, Susanna Drake, Jonathan A. Draper, N. Dreher Martin, Otto Dreydoppel, Angelyn Dries, A. J. Droge, Francis X. D'Sa, Marilyn Dunn, Nicole Wilkinson Duran, Rifaat Ebied, Mark J. Edwards, William H. Edwards, Leonard H. Ehrlich, Nancy L. Eiesland, Martin Elbel, J. Harold Ellens, Stephen Ellingson, Marvin M. Ellison, Robert Ellsberg, Jean Bethke Elshtain, Eldon Jay Epp, Peter C. Erb, Tassilo Erhardt, Maria Erling, Noel Leo Erskine, Gillian R. Evans, Virginia Fabella, Michael A. Fahey, Edward Farley, Margaret A. Farley, Wendy Farley, Robert Fastiggi, Seena Fazel, Duncan S. Ferguson, Helwar Figueroa, Paul Corby Finney, Kyriaki Karidoyanes FitzGerald, Thomas E. FitzGerald, John R. Fitzmier, Marie Therese Flanagan, Sabina Flanagan, Claude Flipo, Ronald B. Flowers, Carole Fontaine, David Ford, Mary Ford, Stephanie A. Ford, Jim Forest, William Franke, Robert M. Franklin, Ruth Franzén, Edward H. Friedman, Samuel Frouisou, Lorelei F. Fuchs, Jojo M. Fung, Inger Furseth, Richard R. Gaillardetz, Brandon Gallaher, China Galland, Mark Galli, Ismael García, Tharscisse Gatwa, Jean-Marie Gaudeul, Luis María Gavilanes del Castillo, Pavel L. Gavrilyuk, Volney P. Gay, Metropolitan Athanasios Geevargis, Kondothra M. George, Mary Gerhart, Simon Gikandi, Maurice Gilbert, Michael J. Gillgannon, Verónica Giménez Beliveau, Terryl Givens, Beth Glazier-McDonald, Philip Gleason, Menghun Goh, Brian Golding, Bishop Hilario M. Gomez, Michelle A. Gonzalez, Donald K. Gorrell, Roy Gottfried, Tamara Grdzelidze, Joel B. Green, Niels Henrik Gregersen, Cristina Grenholm, Herbert Griffiths, Eric W. Gritsch, Erich S. Gruen, Christoffer H. Grundmann, Paul H. Gundani, Jon P. Gunnemann, Petre Guran, Vidar L. Haanes, Jeremiah M. Hackett, Getatchew Haile, Douglas John Hall, Nicholas Hammond, Daphne Hampson, Jehu J. Hanciles, Barry Hankins, Jennifer Haraguchi, Stanley S. Harakas, Anthony John Harding, Conrad L. Harkins, J. William Harmless, Marjory Harper, Amir Harrak, Joel F. Harrington, Mark W. Harris, Susan Ashbrook Harvey, Van A. Harvey, R. Chris Hassel, Jione Havea, Daniel Hawk, Diana L. Hayes, Leslie Hayes, Priscilla Hayner, S. Mark Heim, Simo Heininen, Richard P. Heitzenrater, Eila Helander, David Hempton, Scott H. Hendrix, Jan-Olav Henriksen, Gina Hens-Piazza, Carter Heyward, Nicholas J. Higham, David Hilliard, Norman A. Hjelm, Peter C. Hodgson, Arthur Holder, M. Jan Holton, Dwight N. Hopkins, Ronnie Po-chia Hsia, Po-Ho Huang, James Hudnut-Beumler, Jennifer S. Hughes, Leonard M. Hummel, Mary E. Hunt, Laennec Hurbon, Mark Hutchinson, Susan E. Hylen, Mary Beth Ingham, H. Larry Ingle, Dale T. Irvin, Jon Isaak, Paul John Isaak, Ada María Isasi-Díaz, Hans Raun Iversen, Margaret C. Jacob, Arthur James, Maria Jansdotter-Samuelsson, David Jasper, Werner G. Jeanrond, Renée Jeffery, David Lyle Jeffrey, Theodore W. Jennings, David H. Jensen, Robin Margaret Jensen, David Jobling, Dale A. Johnson, Elizabeth A. Johnson, Maxwell E. Johnson, Sarah Johnson, Mark D. Johnston, F. Stanley Jones, James William Jones, John R. Jones, Alissa Jones Nelson, Inge Jonsson, Jan Joosten, Elizabeth Judd, Mulambya Peggy Kabonde, Robert Kaggwa, Sylvester Kahakwa, Isaac Kalimi, Ogbu U. Kalu, Eunice Kamaara, Wayne C. Kannaday, Musimbi Kanyoro, Veli-Matti Kärkkäinen, Frank Kaufmann, Léon Nguapitshi Kayongo, Richard Kearney, Alice A. Keefe, Ralph Keen, Catherine Keller, Anthony J. Kelly, Karen Kennelly, Kathi Lynn Kern, Fergus Kerr, Edward Kessler, George Kilcourse, Heup Young Kim, Kim Sung-Hae, Kim Yong-Bock, Kim Yung Suk, Richard King, Thomas M. King, Robert M. Kingdon, Ross Kinsler, Hans G. Kippenberg, Cheryl A. Kirk-Duggan, Clifton Kirkpatrick, Leonid Kishkovsky, Nadieszda Kizenko, Jeffrey Klaiber, Hans-Josef Klauck, Sidney Knight, Samuel Kobia, Robert Kolb, Karla Ann Koll, Heikki Kotila, Donald Kraybill, Philip D. W. Krey, Yves Krumenacker, Jeffrey Kah-Jin Kuan, Simanga R. Kumalo, Peter Kuzmic, Simon Shui-Man Kwan, Kwok Pui-lan, André LaCocque, Stephen E. Lahey, John Tsz Pang Lai, Emiel Lamberts, Armando Lampe, Craig Lampe, Beverly J. Lanzetta, Eve LaPlante, Lizette Larson-Miller, Ariel Bybee Laughton, Leonard Lawlor, Bentley Layton, Robin A. Leaver, Karen Lebacqz, Archie Chi Chung Lee, Marilyn J. Legge, Hervé LeGrand, D. L. LeMahieu, Raymond Lemieux, Bill J. Leonard, Ellen M. Leonard, Outi Leppä, Jean Lesaulnier, Nantawan Boonprasat Lewis, Henrietta Leyser, Alexei Lidov, Bernard Lightman, Paul Chang-Ha Lim, Carter Lindberg, Mark R. Lindsay, James R. Linville, James C. Livingston, Ann Loades, David Loades, Jean-Claude Loba-Mkole, Lo Lung Kwong, Wati Longchar, Eleazar López, David W. Lotz, Andrew Louth, Robin W. Lovin, William Luis, Frank D. Macchia, Diarmaid N. J. MacCulloch, Kirk R. MacGregor, Marjory A. MacLean, Donald MacLeod, Tomas S. Maddela, Inge Mager, Laurenti Magesa, David G. Maillu, Fortunato Mallimaci, Philip Mamalakis, Kä Mana, Ukachukwu Chris Manus, Herbert Robinson Marbury, Reuel Norman Marigza, Jacqueline Mariña, Antti Marjanen, Luiz C. L. Marques, Madipoane Masenya (ngwan'a Mphahlele), Caleb J. D. Maskell, Steve Mason, Thomas Massaro, Fernando Matamoros Ponce, András Máté-Tóth, Odair Pedroso Mateus, Dinis Matsolo, Fumitaka Matsuoka, John D'Arcy May, Yelena Mazour-Matusevich, Theodore Mbazumutima, John S. McClure, Christian McConnell, Lee Martin McDonald, Gary B. McGee, Thomas McGowan, Alister E. McGrath, Richard J. McGregor, John A. McGuckin, Maud Burnett McInerney, Elsie Anne McKee, Mary B. McKinley, James F. McMillan, Ernan McMullin, Kathleen E. McVey, M. Douglas Meeks, Monica Jyotsna Melanchthon, Ilie Melniciuc-Puica, Everett Mendoza, Raymond A. Mentzer, William W. Menzies, Ina Merdjanova, Franziska Metzger, Constant J. Mews, Marvin Meyer, Carol Meyers, Vasile Mihoc, Gunner Bjerg Mikkelsen, Maria Inêz de Castro Millen, Clyde Lee Miller, Bonnie J. Miller-McLemore, Alexander Mirkovic, Paul Misner, Nozomu Miyahira, R. W. L. Moberly, Gerald Moede, Aloo Osotsi Mojola, Sunanda Mongia, Rebeca Montemayor, James Moore, Roger E. Moore, Craig E. Morrison O.Carm, Jeffry H. Morrison, Keith Morrison, Wilson J. Moses, Tefetso Henry Mothibe, Mokgethi Motlhabi, Fulata Moyo, Henry Mugabe, Jesse Ndwiga Kanyua Mugambi, Peggy Mulambya-Kabonde, Robert Bruce Mullin, Pamela Mullins Reaves, Saskia Murk Jansen, Heleen L. Murre-Van den Berg, Augustine Musopole, Isaac M. T. Mwase, Philomena Mwaura, Cecilia Nahnfeldt, Anne Nasimiyu Wasike, Carmiña Navia Velasco, Thulani Ndlazi, Alexander Negrov, James B. Nelson, David G. Newcombe, Carol Newsom, Helen J. Nicholson, George W. E. Nickelsburg, Tatyana Nikolskaya, Damayanthi M. A. Niles, Bertil Nilsson, Nyambura Njoroge, Fidelis Nkomazana, Mary Beth Norton, Christian Nottmeier, Sonene Nyawo, Anthère Nzabatsinda, Edward T. Oakes, Gerald O'Collins, Daniel O'Connell, David W. Odell-Scott, Mercy Amba Oduyoye, Kathleen O'Grady, Oyeronke Olajubu, Thomas O'Loughlin, Dennis T. Olson, J. Steven O'Malley, Cephas N. Omenyo, Muriel Orevillo-Montenegro, César Augusto Ornellas Ramos, Agbonkhianmeghe E. Orobator, Kenan B. Osborne, Carolyn Osiek, Javier Otaola Montagne, Douglas F. Ottati, Anna May Say Pa, Irina Paert, Jerry G. Pankhurst, Aristotle Papanikolaou, Samuele F. Pardini, Stefano Parenti, Peter Paris, Sung Bae Park, Cristián G. Parker, Raquel Pastor, Joseph Pathrapankal, Daniel Patte, W. Brown Patterson, Clive Pearson, Keith F. Pecklers, Nancy Cardoso Pereira, David Horace Perkins, Pheme Perkins, Edward N. Peters, Rebecca Todd Peters, Bishop Yeznik Petrossian, Raymond Pfister, Peter C. Phan, Isabel Apawo Phiri, William S. F. Pickering, Derrick G. Pitard, William Elvis Plata, Zlatko Plese, John Plummer, James Newton Poling, Ronald Popivchak, Andrew Porter, Ute Possekel, James M. Powell, Enos Das Pradhan, Devadasan Premnath, Jaime Adrían Prieto Valladares, Anne Primavesi, Randall Prior, María Alicia Puente Lutteroth, Eduardo Guzmão Quadros, Albert Rabil, Laurent William Ramambason, Apolonio M. Ranche, Vololona Randriamanantena Andriamitandrina, Lawrence R. Rast, Paul L. Redditt, Adele Reinhartz, Rolf Rendtorff, Pål Repstad, James N. Rhodes, John K. Riches, Joerg Rieger, Sharon H. Ringe, Sandra Rios, Tyler Roberts, David M. Robinson, James M. Robinson, Joanne Maguire Robinson, Richard A. H. Robinson, Roy R. Robson, Jack B. Rogers, Maria Roginska, Sidney Rooy, Rev. Garnett Roper, Maria José Fontelas Rosado-Nunes, Andrew C. Ross, Stefan Rossbach, François Rossier, John D. Roth, John K. Roth, Phillip Rothwell, Richard E. Rubenstein, Rosemary Radford Ruether, Markku Ruotsila, John E. Rybolt, Risto Saarinen, John Saillant, Juan Sanchez, Wagner Lopes Sanchez, Hugo N. Santos, Gerhard Sauter, Gloria L. Schaab, Sandra M. Schneiders, Quentin J. Schultze, Fernando F. Segovia, Turid Karlsen Seim, Carsten Selch Jensen, Alan P. F. Sell, Frank C. Senn, Kent Davis Sensenig, Damían Setton, Bal Krishna Sharma, Carolyn J. Sharp, Thomas Sheehan, N. Gerald Shenk, Christian Sheppard, Charles Sherlock, Tabona Shoko, Walter B. Shurden, Marguerite Shuster, B. Mark Sietsema, Batara Sihombing, Neil Silberman, Clodomiro Siller, Samuel Silva-Gotay, Heikki Silvet, John K. Simmons, Hagith Sivan, James C. Skedros, Abraham Smith, Ashley A. Smith, Ted A. Smith, Daud Soesilo, Pia Søltoft, Choan-Seng (C. S.) Song, Kathryn Spink, Bryan Spinks, Eric O. Springsted, Nicolas Standaert, Brian Stanley, Glen H. Stassen, Karel Steenbrink, Stephen J. Stein, Andrea Sterk, Gregory E. Sterling, Columba Stewart, Jacques Stewart, Robert B. Stewart, Cynthia Stokes Brown, Ken Stone, Anne Stott, Elizabeth Stuart, Monya Stubbs, Marjorie Hewitt Suchocki, David Kwang-sun Suh, Scott W. Sunquist, Keith Suter, Douglas Sweeney, Charles H. Talbert, Shawqi N. Talia, Elsa Tamez, Joseph B. Tamney, Jonathan Y. Tan, Yak-Hwee Tan, Kathryn Tanner, Feiya Tao, Elizabeth S. Tapia, Aquiline Tarimo, Claire Taylor, Mark Lewis Taylor, Bishop Abba Samuel Wolde Tekestebirhan, Eugene TeSelle, M. Thomas Thangaraj, David R. Thomas, Andrew Thornley, Scott Thumma, Marcelo Timotheo da Costa, George E. “Tink” Tinker, Ola Tjørhom, Karen Jo Torjesen, Iain R. Torrance, Fernando Torres-Londoño, Archbishop Demetrios [Trakatellis], Marit Trelstad, Christine Trevett, Phyllis Trible, Johannes Tromp, Paul Turner, Robert G. Tuttle, Archbishop Desmond Tutu, Peter Tyler, Anders Tyrberg, Justin Ukpong, Javier Ulloa, Camillus Umoh, Kristi Upson-Saia, Martina Urban, Monica Uribe, Elochukwu Eugene Uzukwu, Richard Vaggione, Gabriel Vahanian, Paul Valliere, T. J. Van Bavel, Steven Vanderputten, Peter Van der Veer, Huub Van de Sandt, Louis Van Tongeren, Luke A. Veronis, Noel Villalba, Ramón Vinke, Tim Vivian, David Voas, Elena Volkova, Katharina von Kellenbach, Elina Vuola, Timothy Wadkins, Elaine M. Wainwright, Randi Jones Walker, Dewey D. Wallace, Jerry Walls, Michael J. Walsh, Philip Walters, Janet Walton, Jonathan L. Walton, Wang Xiaochao, Patricia A. Ward, David Harrington Watt, Herold D. Weiss, Laurence L. Welborn, Sharon D. Welch, Timothy Wengert, Traci C. West, Merold Westphal, David Wetherell, Barbara Wheeler, Carolinne White, Jean-Paul Wiest, Frans Wijsen, Terry L. Wilder, Felix Wilfred, Rebecca Wilkin, Daniel H. Williams, D. Newell Williams, Michael A. Williams, Vincent L. Wimbush, Gabriele Winkler, Anders Winroth, Lauri Emílio Wirth, James A. Wiseman, Ebba Witt-Brattström, Teofil Wojciechowski, John Wolffe, Kenman L. Wong, Wong Wai Ching, Linda Woodhead, Wendy M. Wright, Rose Wu, Keith E. Yandell, Gale A. Yee, Viktor Yelensky, Yeo Khiok-Khng, Gustav K. K. Yeung, Angela Yiu, Amos Yong, Yong Ting Jin, You Bin, Youhanna Nessim Youssef, Eliana Yunes, Robert Michael Zaller, Valarie H. Ziegler, Barbara Brown Zikmund, Joyce Ann Zimmerman, Aurora Zlotnik, Zhuo Xinping
- Edited by Daniel Patte, Vanderbilt University, Tennessee
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- The Cambridge Dictionary of Christianity
- Published online:
- 05 August 2012
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- 20 September 2010, pp xi-xliv
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DNS of wavepacket evolution in a Blasius boundary layer
- K. S. YEO, X. ZHAO, Z. Y. WANG, K. C. NG
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- Journal:
- Journal of Fluid Mechanics / Volume 652 / 10 June 2010
- Published online by Cambridge University Press:
- 19 May 2010, pp. 333-372
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This paper presents the direct numerical simulation (DNS) of wavepacket evolution and breakdown in a Blasius boundary layer. The study covers the physical, spectral and structural aspects of the whole transition process, whereas previous studies have tended to focus on issues of a more limited scope. The simulations are modelled after the experiments of Cohen, Breuer & Haritonidis (J. Fluid Mech., vol. 225, 1991, p. 575). The disturbance wavepackets are initiated here by a u-velocity and a v-velocity delta pulse. They evolve through a quasi-linear growth stage, a subharmonic stage and a strongly nonlinear stage before breaking down into the nascent turbulent spots. Pulse-initiated wavepackets provide a plausible model for naturally occurring laminar–turbulent transition because they contain disturbances in a broadband of frequencies and wavenumbers, whose sum of interactions determines the spatio-temporal progress of the wavepackets. The early development of the wavepackets accords well with established linear results. The ensuing subharmonic evolution of the wavepackets appears to be underpinned by a critical-layer-based mechanism in which the x-phase speeds of the fundamental two-dimensional and dominant three-dimensional waves with compatible Squire wavenumbers are approximately matched. Spectral data over the bulk of the subharmonic stage demonstrate good consistency with the action of a phase-locked theory recently proposed by Wu, Stewart & Cowley (J. Fluid Mech., vol. 590, 2007, p. 265), strongly suggesting that the latter may be the dominant mechanism in the broadband nonlinear evolution of wavepackets. The dominant two-dimensional and three-dimensional waves are observed to be spontaneously evolving towards triad resonance in the late subharmonic stage. The simulations reproduce many key features in the experiments of Cohen et al. (1991) and Medeiros & Gaster (J. Fluid Mech., vol. 399, 1999b, p. 301). A plausible explanation is also offered for the apparently ‘deterministic’ subharmonic behaviour of wavepackets observed by Medeiros & Gaster. The strongly nonlinear stage is signified by the appearance of low-frequency streamwise-aligned u-velocity structures at twice the spanwise wavenumber of the dominant three-dimensional waves, distortion of the local base flow by the strengthening primary Λ-vortex and rapid expansion of the spanwise wavenumber (β) spectrum. These are in broad agreement with the experimental observations of Breuer, Cohen & Haritonidis (J. Fluid Mech., vol. 340, 1997, p. 395). The breakdown into incipient turbulent spots occurs at locations consistent with the experiments of Cohen et al. (1991). A visualization shows that the evolving wavepackets comprise very thin overlapping vorticity sheets of alternating signs, in stacks of two or three. Strong streamwise stretching of the flow at the centre of the wavepacket in the late subharmonic and strongly nonlinear stages promotes the roll-up and intensification of the vorticity sheets into longitudinal vortices, whose mutual induction precedes the breakdown of the wavepacket. The critical layer of the dominant two-dimensional and oblique wave modes reveals the progressive coalescence of a strong pair of vortices (associated with the Λ-vortex) during the subharmonic stage. Their coalescence culminates in a strong upward burst of velocity that transports lower momentum fluid from below the critical layer into the upper boundary layer to form a high shear layer in the post-subharmonic stage.
Traps in Si-doped AlxGa1-xN Grown by Molecular Beam Epitaxy on Sapphire Characterized by Deep Level Transient Spectroscopy
- Mo Ahoujja, S Elhamri, M Hogsed, Y. K. Yeo, R. L. Hengehold
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- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I15-30
- Print publication:
- 2006
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Deep levels in Si doped AlxGa1−xN samples, with Al mole fraction in the range of x = 0 to 0.30, grown by radio-frequency plasma activated molecular beam epitaxy on sapphire substrates were characterized by deep level transient spectroscopy (DLTS). DLTS measurements show two significant electron traps, P1 and P2, in AlGaN at all aluminum mole fractions. The electron trap, P2, appears to be a superposition of traps A and B , both of which are observed in GaN grown by various growth techniques and are thought to be related to VGa-shallow donor complexes. Trap P1 is related to line defects and N-related point defects. Both of these traps are distributed throughout the bulk of the epitaxial layer. An additional trap P0 which was observed in Al0.20Ga0.80N and Al0.30Ga0.70N is of unknown origin, but like P1 and P2, it exhibits dislocation-related capture kinetics. The activation energy measured from the conduction band of the defects is found to increase with Al mole content, a behavior consistent with other III-V semiconductors.
Donor-like Deep Level Defects in GaN Characterized by Double-correlation Deep Level Transient Spectroscopy
- Mo Ahoujja, M Hogsed, Y. K. Yeo, R. L. Hengehold
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF24-01
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- 2005
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Si doped GaN grown by molecular beam epitaxy on sapphire substrates were characterized by capacitance transient spectroscopy. Conventional deep level transient spectroscopy (DLTS) measurements displayed six deep level defects, labeled A1, A, B, C1, C, and D, with activation energy ranging from 0.20 to 0.82 eV below the conduction band. Based on the logarithmic dependence of the DLTS spectral peaks on the filling pulse width, it is deduced that the defects A, B, C, and D are concentrated in the vicinity of line dislocations. Double-correlation DLTS (DDLTS) measurements, on the other hand, showed that only defects A (0.82 eV) and D (0.22 eV) exhibited deep donor-like characteristics. Following a 1.0 MeV electron irradiation of the GaN sample, one radiation-induced peak, E, with activation energy less than 0.20 eV was observed in the DLTS spectrum. However, after annealing at 350 °C, this DLTS peak intensity was found to diminish significantly.
The Electrical Characteristics of the MOSCAP Structures with W/WNx/poly Si1−XGeX Gates Stack
- S.-K. Kang, J. J. Kim, D.-H. Ko, T. H. Ahn, I. S. Yeo, T. W. Lee, Y. H. Lee
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- Journal:
- MRS Online Proceedings Library Archive / Volume 670 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, K5.9
- Print publication:
- 2001
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We investigated the electrical characteristics of the MOSCAP structures with W/WNx/poly Si1−xGex gates stack using C-V and I-V. The low frequency C-V measurements demonstrated that the flat band voltage of the W/WNx /poly Si0.4Ge0.6 stack was lower than that of W/ WNx /poly Si0.2Ge0.8 stack by 0.3V, and showed less gate-poly-depletion-effect than that of W/ WNx /poly- Si0.2Ge0.8 gates due to the increase of dopant activation rate with the increase of Ge content in the poly Si1−xGex films. As Ge content in poly Si1−xGex increased, the leakage current level increased a little due to the increase of direct tunneling and QBD became higher due to the lower boron penetration.
Electrical properties of MBE grown Si-doped AlxGa1−xN as a function of nominal Al mole fraction up to 0.5
- M. Ahoujja, Y. K. Yeo, R. L. Hengehold, J. E. Van Nostrand
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- Journal:
- MRS Online Proceedings Library Archive / Volume 680 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, E3.5
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- 2001
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Hall-effect measurements were conducted on Si-doped AlxGa1−xN films grown on sapphire substrate by gas source molecular beam epitaxy. The Al mole fraction in the 1 [.proportional]m thick AlxGa1−xN was 0.0, 0.3, and 0.5, and the Si doping concentration was kept at a nominal value of 1018 cm−3. Variable temperature Hall-effect measurements reveal a presence of a highly degenerate n-type region at the AlxGa1−xN /sapphire interface. This degenerate interfacial layer dominates the electrical properties below 30 K and significantly affects the properties of the AlxGa1−xN layer. Thus, by using a two-layer conducting model, the carrier concentration and mobility of the AlxGa1−xN layer alone are obtained.
Neodymium and Erbium Implanted Gan
- E. Silkowski, Y. K. Yeo, R. L. Hengehold, B. Goldenberg, G. S. Pomrenke
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- Journal:
- MRS Online Proceedings Library Archive / Volume 422 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 69
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- 1996
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Strong rare earth (RE) emissions from Nd and Er implanted into MOCVD grown GaN were observed through photoluminescence (PL) with below bandgap excitation from an Ar+laser. Three well resolved manifolds of 4f lines from the crystal-field split 4F3/2 → 4I9/2, 4F3/2 → 4I11/2, and 4F3/2 → 4I13/2 transitions of Nd3+ were observed at low temperature at ˜0.98, ˜1.14, and ˜1.46 μm, respectively. The Er implanted GaN showed both the 4I13/2 → 4I15/2 Er3+ transition at ˜1.54 μm and the 4I11/2 → 4I15/2 Er3+ transition at ˜1.00 μm. The Er luminescence at ˜1.54 μm and Nd luminescence at ˜1.1 μm persisted to room temperature. Both Er and Nd implanted samples showed increasing RE3+ signal as annealing temperature increased from 700 to 1000 °C. The growth of new 4f crystal-field split-lines in the ˜1.54 μm 4I13/2 → 4I15/2 manifold as annealing temperature was increased to 1000 °C suggests multiple Er3+ radiative centers.
Defect Dominant Junction Characteristics of 4H-SiC p+/n Diodes
- J. Scofield, M. Dunn, K. Reinhardt, Y. K. Yeo, R. Hengehold
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- Journal:
- MRS Online Proceedings Library Archive / Volume 423 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 57
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- 1996
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Forward and reverse current-voltage (I-V-T) measurements of MOCVD grown 4H-SiC p+/n diodes are compared to classical recombination-generation theory over the temperature range of 100 to 750 K. The forward bias data indicate that the I-V characteristics of the wellbehaved devices follow a classical recombination dominant transport mechanism. Ideality factors were determined to be in the range of 1.85 to 2.09, and the forward activation energy found to be EA = l.56 eV compared to a nearly ideal value of 1.6 eV. A majority of the devices tested under forward bias conditions were, however, found to exhibit significant leakage current components due to tunneling at forward biases of up to 2.2 V for turn-on voltages in the 2.5 to 3.0 range. Deep level transient spectroscopy (DLTS) was also performed on the diode structures over the same wide temperature range, and the results were correlated to those obtained from reverse I-V-T and C-V-T characterization. Deep level defects at energies between 200 and 856 meV were identified from the DLTS data, and these levels are believed to be responsible for the tunneling dominant current conduction. Intrinsic deep levels, common to all devices tested, are emphasized and suggested as possible reverse bias tunneling paths for breakdown to explain the lack of an avalanche mechanism in all of the 4H-SiC diodes tested.
Annealing Study of Ion Implanted MOCVD and MBE Grown GaN
- E. Silkowski, Y. K. Yeo, R. L. Hengehold, M. A. Khan, T. Lei, K. Evans, C. Cerny
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 813
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- 1995
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MOCVD and MBE grown GaN were implanted with Ar, Mg, Si, Be, C, and O, and annealed in a conventional oven under flowing NH3 or N2 gas. Absorption measurements confirmed that implantation damage was annealed out after 90 minutes at a temperature of 1000 °C. Surface damage caused by NH3 annealing was evident in absorption and photoluminescence measurements for annealing temperatures of over 1000 °C. Although most of the implants showed no unique luminescence peaks, systematic changes in the relative intensities of the exciton, donor-acceptor pair, and yellow peaks were noted. The Mg implanted samples showed evidence of the acceptor bound exciton line at 3.44 eV, and a unique peak at 3.3 eV possibly due to a Mg free-to-bound transition.
Annealing Studies of Er-Implanted GaAs and the Excitation Mechanism of Er in GaAs
- D. W. Elsaesser, J. E. Colon, Y. K. Yeo, R. L. Hengehold, G. S. Pomrenke
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- Journal:
- MRS Online Proceedings Library Archive / Volume 301 / 1993
- Published online by Cambridge University Press:
- 21 February 2011, 251
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- 1993
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Electrical and optical measurements were performed on p-type GaAs implanted with 1013 Er ions/cm2 at an energy of 1 MeV. The samples were annealed at 650, 750, 850, or 900 °C for 15 seconds using the rapid thermal annealing technique. Although annealing at 650 °C was insufficient to recover measureable electrical conductivity in the implanted region, Er3+ 4f-4f emissions were still observed. Annealing at 750 TC produced a large concentration of hole traps at EV + 360 meV, and the most intense Er-related emissions at 1.54 μm. The two higher annealing temperatures returned the implanted region to the conductivity of the substrate but resulted in weak Er-related emissions. Two distinct Er-related centers were found, and they are believed to be the cause of the intense and weak emissions, an Er-interstitial and Er substituting for Ga, respectively.
Ir Radiation Transient Annealing of Silicon Implanted Si Gallium Arsenide
- A. Ezis, Y. K. Yeo, Y. S. Park
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- Journal:
- MRS Online Proceedings Library Archive / Volume 23 / 1983
- Published online by Cambridge University Press:
- 22 February 2011, 681
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- 1983
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The electrical properties of IR radiation transient annealed Si implanted semi-insulating GaAs are presented for 100 keV ion doses from 3 × 1012 to 3 × 1014 cm−2. For wafers implanted with 3 × 1012 cm−2 doses, suitable for FET channel layers, carrier concentration and drift mobility profiles were determined from C-V and transconductance measurements on fat FET structures. Optimum electrical activation and carrier concentration profiles were obtained for peak pulse temperatures of 930–950°C. Van der Pauw measurements were made on substrates implanted with Si doses ≥ 1 × 1013 cm−2 to determine sheet carrier concentration and Hall mobility. The peak pulse temperature required to give optimum activation efficiency is found to increase with dose. The results presented here demonstrate that undoped substrates are preferable to Cr-doped substrates for low dose device applications.